Igbt Transistors

Igbt Transistors

Product Details:


Product Description

Igbt Transistors 

We are highly engrossed in offering a wide assortment of IGBT Modules. The products are known for efficiency and fast switching. The offered IGBT's are purchased from the certified vendors of the industry, who make use of optimum grade material and other vital components required for the production process. These IGBT's can be availed by the clients as per their stipulations.

 Technical Specification

Collector-Emitter Saturation Voltage

1.76 V

Collector- Emitter Voltage VCEO Max

1200 V

Continuous Collector Current at 25 C

300 A

Gate-Emitter Leakage Current

400 nA

Maximum Gate Emitter Voltage

20 V

Mounting Style


Operating Temperature

- 40 Deg C to + 150 Deg C

Pd - Power Dissipation

20 mW


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